Log In / Register
Stanford Nanoelectronics Lab
  • Home
  • About Us
  • Presentations
  • Publications
  • Models
  • Media Gallery
  • Courses
  • Links
  • Featured Publications
  • Publication Index
  • Publication Categories
    • CNTs & CNFETs (32)
    • Nanoelectronics and Nanotechnology (14)
    • Nanoscale CMOS and III-V CMOS (19)
    • NEMS-Based Logic and Memory (6)
    • PCM & Diblock Copolymer (17)
    • Additional Publications (2)

Publications

Analysis of the Frequency Response of Carbon Nanotube Transistors

Download Publication
Externally linked
Authors D. Akinwande., G.F. Close, and H.-S. P. Wong
Date September 11, 2006
Keywords Radio Frequency, Carbon Nanotube Transitor
How to Cite Akinwande, D., Close, G.F., Wong, H.-S.P., "Analysis of the Frequency Response of Carbon Nanotube Transistors," Nanotechnology, IEEE Transactions on , vol.5, no.5, pp. 599-605, Sept. 2006.
Abstract The characterizations of carbon nanotube transistors at high frequencies have so far been hindered by large parasitic and extrinsic capacitances. We present a quantitative analysis of the limitations imposed by probe pad parasitics on single-wall carbon nanotube transistor characterization at gigahertz frequencies. Our analysis reveals the various kinds of frequency responses that can be expected to be measured. Furthermore, we present design guidelines and a suitable device layout to achieve gain and bandwidth at gigahertz frequencies.
Category CNTs & CNFETs
  • Terms of Use
  • Administrator Login
Copyright © 2008 Stanford University Contact the Webmaster