Publications
An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory
| Authors | Y. Zhang, S. Kim, J.P. McVittie, H. Jagannathan, J.B. Ratchford, C.E.D. Chidsey, Y. Nishi, and H.-S. P. Wong |
| Date | June 12, 2007 |
| How to Cite | Y. Zhang, S. Kim, J.P. McVittie, H. Jagannathan, J.B. Ratchford, C.E.D. Chidsey, Y. Nishi, and H.-S. P. Wong, An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory, Symp. VLSI Technology, pp. 98 99, June 12 14, 2007, Kyoto, Japan. |
| Abstract | We demonstrate a novel phase change memory cell utilizing doped nanowire pn-junction diode both as a bottom electrode and a memory cell selection device for a cross-point memory array. Using an isolated vertical nanowire in each cell, the contact area is below the lithography limit. Very low SET programming current of 30 uA is achieved. RESET/SET resistance ratio is 100x. The diode provides 100x isolation between forward and reverse bias in the SET state. |
| Category | PCM & Diblock Copolymer |