For the paper entitled “Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”

Researchers at Stanford Engineering have developed an ultrathin material that conducts electricity better than copper and could enable more energy-efficient nanoelectronics.

Stanford’s membership in a new national consortium will aid researchers in developing the next generation of chips essential for electronics

TSMC’s former R&D chief wants designers to combine different memory technologies

Powering a more sustainable future

Gain Cell combines the high density of DRAM with the speed of SRAM