News

For the paper entitled “Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”

Researchers at Stanford Engineering have developed an ultrathin material that conducts electricity better than copper and could enable more energy-efficient nanoelectronics.

Stanford’s membership in a new national consortium will aid researchers in developing the next generation of chips essential for electronics

TSMC’s former R&D chief wants designers to combine different memory technologies

Powering a more sustainable future

Gain Cell combines the high density of DRAM with the speed of SRAM

One year fellowships are awarded to promote, recognize, and support PhD level study and research within the Electron Devices Society’s field of interest.

CHIPS Act funding boosts research into dense, speedy hybrid gain cell memory

The project aims to translate extensive university research into practical manufacturing environments in collaborate with Defense Industrial Base sector companies.

AI-infused Advanced Manufacturing: Future of America

Advances in semiconductors are feeding the AI boom

A new phase-change memory developed by Stanford researchers offers faster, more efficient data processing capabilities.

Stanford researchers mimic brain structure with ferroelectric material