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Faculty Advisor

Prof. H. -S. Philip Wong
Willard R. and Inez Kerr Bell Professor of Engineering
 
CISX 312 +1 (650) 725 0982
hspwong@stanford.edu http://web.stanford.edu/~hspwong/
Research Interests: Carbon electronics, biosensors, self-assembly, exploratory logic devices, nanoelectromechanical relays, device modeling, and non-volatile memory devices such as phase change memory and metal oxide resistance change memory

 

Administrative Assistant

Isabelle London   
Allen 329x  +1 (650) 736 5168
ilondon@stanford.edu   

Graduate Students

NameResearch InterestsEmail (@stanford.edu)
Wei-Chen Harry ChenIn-Memory Computingweichen9
Shuhan LiuEmbedded Dynamic Random Access Memoryshliu98
Xiangjin WuPhase Change Memoryxiangjin
Koustav Jana Oxide transistor device modeling kj2011
Jennifer JiangOxide transistorqjiang81
Hugo ChenFerroelectric FEThugochen
Samantha Afra van RijsCarbon Nanotubesvanrijs
Jimin KangP-type Oxidejimin131

Current Post Doctoral Fellows

NameResearch InterestsEmail (@stanford.edu)
Jihun RhoIn vivo nano-biosensingrjihun
Xinxin WangIn-Memory Computing Architecture Designxxwang1
Shengman LiHigh-performance CNFET with extreme CGP-scaling and oxide semiconductor-based memorysmli2020
Gilad ZeeviCarbon Nanotube FETgiladz21
Fabia Farlin Athena fathena

 

Current Visiting Scholars and Faculty

NameInstitutionTitle
Jian ChenStanfordVisiting Scholar, Adjunct Professor in EE Department
Minseong ParkSandia National Laboratories Visiting Scholar

Current Visiting Student Researcher

NameInstitutionJoining Year

Alumni - Graduated Students

NameThesis TitleYear of GraduationPost-Stanford Affiliation
Jie DengDevice Modeling and Circuit Performance Evaluation for Nanoscale Devices: Silicon Technology Beyond 45 nm Node and Carbon Nanotube Field Effect TransistorsJune 2007IBM
Gael F. CloseOn-Chip Demonstration of Carbon Nanotube InterconnectsJune 2008IBM
Yuan ZhangNanoscale Phase Change Memory: Device Structure and Material CharacterizationSeptember 2008SanDisk
Deji AkinwandeCarbon Nanotubes: Device Physics, RF Circuits, Surface Science, and NanotechnologyNovember 2009UT Austin
Albert LinCarbon Nanotube Synthesis, Device Fabrication, and Circuit Design for Digital Logic ApplicationsMay 2010Apple
Lan WeiNanoelectronics: Technology Assessment and Projection at the Device, Circuit, and System LevelAugust 2010MIT
SangBum KimScalability and Reliability of Phase Change MemoryAugust 2010IBM
Saeroonter OhModeling of III-V Nanoscale Field-Effect Transistors for Logic CircuitsAugust 2010LG
Li-Wen ChangDevice/Circuit Fabrication Using Diblock Copolymer LithographySeptember 2010Applied Materials
Arash HazeghiCarbon Nanotube ElectronicsApril 2011Oswami
Cara BeasleyChirality Distributions: Effects of Carbon Source and Growth Condition Changes on the Single-Walled Carbon Nanotubes Grown by CVDMay 2011Applied Materials
Marissa CaldwellColloidal Nanoparticles for Phase Change Memory ApplicationsAugust 2011Wildcatdiscovery
Jenny HuDevice Technology for Nanoscale III-V Compound Semiconductor Field Effect TransistorsNovember 2011Intel
Byoungil LeeFabrication and Characterization of Nanoscale Resistance Change Memory (RRAM)November 2011Samsung
Soogine ChongDesign and Fabrication of Electrostatically Actuated Nanoelectromechanical Relays and Their Integration with CMOSJanuary 2012Samsung
Jiale LiangToward sub-10 nm Phase Change Memory – Device Structure and Array AnalysisJune 2012Oracle
Xiangyu (Helen) ChenThe Application of Graphene for Integrated Circuit Interconnect TechnologyAugust 2012Mckinsey
Jason ParkerSynthetic Routes Toward Scalable, Tunable Carbon Nanotube Ensembles for use in DevicesJune 2013Intel
Shimeng YuResistive Switching Memory for Non-Volitile Storage and Neuromorphic ComputingJuly 2013Arizona State University
Yun (Lisa) ChenScalable Wireless Monitoring Systems With Passive Sensors For Biomedical ApplicationsAugust 2013McKinsey
Yi (Alice) WuResistive Switching Random Access Memory (RRAM) – Scaling, Materials, and New ApplicationAugust 2013Oracle
Rakesh JeyasinghPhase change memory : device physics, scaling and neuromorphic applicationFebruary 2014Intel
Hong-Yu (Henry) ChenResistive switching random access memory, materials and device engineering for 3D architectureMarch 2014SanDisk
Luckshita (Lucky) LiyanageA solid-state doping technology for carbon nanotubes2014SanDisk
He (Linda) YiDirected self-assembly for nanofabrication and device integration2015Apple
Chiyui (Ethan) AhnEmerging non-volatile memory enabled by carbon nano-materials2015UT San Antonio
Kokab Baghbani PariziAdvances on Chip Inside A Cell for Monitoring Physiological Cell Parameters2015 
Chi-Shuen (Vince) LeeCMOS technology assessment and optimization, from device and interconnect modeling to system performance evaluationJune 2017AiN Networks
Scott FongInterplay of Electrical and Thermal effects in Phase-Change MemoryJune 2017Intel
Sukru Burc EryilmazBrain-inspired computing with resistive non-volatile memoriesJune 2017NVIDIA
Ling LiIntegrating graphene with copper interconnects for future energy-efficient and reliable nanoelectronic systemsAugust 2018Apple
Joon SohnResistive switching random access memory - device scaling in 3D architecture and integration with complementary metal oxide semiconductorAugust 2018Apple
Gregory PitnerLow contact resistance and dense assembly towards high drive current carbon nanotube transistorsMarch 2019AlignedCarbon
Xiaolin (Jasmine) HuAdvances on chip-in-cell wireless platform for continuous monitoring of physiological parameters in single cellsApril 2019Apple
Kye OkabeInvestigating the Switching Mechanism of Interfacial Phase Change MemoryJune 2019TBD
Ziwen (Jerry) WangResistive Switching in Metal-Oxides: New Characterization Techniques and New InsightsJune 2019 
Mimi YangTechniques for a Chip-in-Cell Wireless Platform for Single Cell MonitoringNovember 2019Bain & Company
Chris NeumannThe Effect of Interfaces on Phase Change Memory SwitchingDecember 2019Intel
Zizhen JiangResistive switching random access memory (RRAM) : analysis, modeling, and characterization toward practical applicationsJune 2020Google
Ching-Hua (Fiona) Wang2D materials for logic and memory integrationJune 2020Apple
Rebecca ParkUnderstanding and manipulating charges surrounding carbon nanotubes : a step towards high-performance computing with carbone nanotube transistorsJune 2020Samsung
Alvin Universe TangTowards low temperature solid source synthesis of monolayer molybdenum disulfide and low resistance contacts to molybdenum disulfide-based devicesJune 2021TSMC
Xin ZhengStoring analog data with an analog memory systemJune 2022Apple
Weier WanRRAM compute-in-memory hardware for efficient, versatile, and accurate AI inferenceJune 2022Aizip
Haitong LiRRAM-CMOS integrated hardware for efficient learning and inference at the edgeJune 2022Purdue University
"Yujo" Zhouchangwan YuHafnium oxide based ferroelectric materials for memory applicationsJune 2022Apple
Shengjun (Sophia) Qin3D vertical resistive switching memory towards ultrahigh-density non-volatile memorySeptember 2022Ampere Computing
Maryann TungBlock copolymer directed self-assembly for patterning memory and logicSeptember 2022PsiQuantum
Qing LinLeakage current characterization and projection in carbon nanotube transistorsJune 2023TSMC
Carlo GilardiDesign Technology Co-Optimization of Energy-Efficient Digital Logic using Carbon NanotubesNov 2023TSMC
    

Former Research Associates

NamePost-Stanford Affiliation
J ProvineAligned Carbon
Jim McVittie 

Former Visiting Scholars and Faculty

NameInstitutionTitleDate
Kasidit ToprasertpongUniversity of TokyoVisiting Professor 
Seunghyun LeeKyung Hee UniversityVisiting Professor 
Byoungtaek KimSamsung ElectronicsVisiting Scholar 
Dongjin LeeSamsung ElectronicsVisiting Scholar 
Woo C. NohSamsung ElectronicsVisiting Scholar 
Shosuke FujiiToshiba CorporationVisiting Scholar2016-17
Fang YuanThe Hong Kong Polytechnic UniversityVisiting PostDoc2016-17
Yao GuoThe Hong Kong Polytechnic UniversityVisiting PostDoc2016-17
Sejun ParkSamsung ElectronicsVisiting Scholar2016-17
Yong Sung KimSamsung ElectronicsVisiting Scholar2014-15
Suk Kang SungSamsung ElectronicsVisiting Scholar2013-14
Kailiang ZhangTianjin University of TechnologyVisiting Faculty2013-14
Tianling RenTsinghua UniversityVisiting Faculty2011-12
Wonje ParkSamsung ElectronicsVisiting Scholar2011-12
Kaveh MilaniniaUC Santa BarbaraVisiting Scholar2011-12
Yang ChaiHong Kong Polytechnic UniversityVisiting Scholar2009-11
Jinil LeeSamsung ElectronicsVisiting Scholar2009-11
Hae Taek KimSamsung ElectronicsVisiting Scholar2006-07
Eiji YoshidaFujitsu LaboratoriesVisiting Scholar2007-08
Jeong- Hyong YiSeoul National UniversityVisiting Scholar2006-07
Byong Jae BaeSamsung ElectronicsVisiting Scholar2007-09
Sunae SeoSamsung Advanced Institue of Technology (SAIT)Visiting Scholar2005-06

Former Post-Doctoral Researchers

NamePost-Stanford AffiliationDate
Stella TangHong Kong Polytechnic University2011-12
Ximeng GuanIBM2010-12
Daesung LeeInvensense2009-13
Duygu KuzumUniversity of Pennsylvania2008-11
Xinyu BaoApplied Materials2008-11
Kerem AkarvardarGlobal Foundries2006-09
Xiaoqing XuStanford University2011-14
Jesse EngelBaidu2013-14
Seunghyun LeeKyung Hee University2014-15
Ji Cao 2014-16
Ethan AhnApple2015-16
Jean Anne Currivan-IncorviaUT Austin2015-17
Karl-Magnus PerssonLund University2015-17
Rui YangShanghai Jiao Tong University2016-18
Raisul IslamTSMC2017-19
Jimin KwonUNIST2020-22

Former Visiting Student Researchers

NameHome InstitutionDate
I-Ting WangNational Chiao Tung University2016
Yuanyuan ShiSoochow University2016
Jen-chien LiuNational Chiao Tung University2016
Xurong LiPeking University2015
Chung-Wei (Jerry) HsuNational Chiao Tung University, Taiwan2015
Haitao XuPeking University2014
Shih-Chieh WuNational Chiao-Tung University2013
Emanuele GiacomettiInstitute Polytechnique de Grenoble2013
Fabio GiovanardiUniversity of Bologna2012
Christoph EggimannSwiss Federal Institute of Tech. (EPFL)2007