Novel Memory and Storage Devices
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Novel Memory and Storage Devices
Memory and storage devices beyond the technology roadmap. The projects scope covers new device concepts, device physics, modeling, and device fabrication. At present, we work in three areas: (1) memory cell selection device, (2) phase change memory, and (3) metal oxide memory (RRAM).
We study the device physics of phase change memory and metal oxide RRAM by fabricating novel device structures that enable detailed electrical characterization of their properties. We perform physics-based modeling to elucidate the physics of switching and construct compact models to explore the use of these memory devices in various applications.
