Oxide Semiconductor Transistors for 3D ICs

Oxide semiconductors are highly promising for backend-of-the-line (BEOL) transistors due to their compatibility with low-temperature processing and their low off-current (<10^-18 A/µm), enabled by their wide bandgap (>3 eV). These characteristics make them ideal for low-power memory and CMOS BEOL applications. However, challenges remain in scaling device size and operation voltage compared to commercialized oxide thin-film transistors used in displays.

      To fully realize 3D ICs’ potential, this research focuses on developing high-performance oxide semiconductor devices processed at low temperatures. Key areas include understanding transistor behavior at scaled dimensions, integrating oxide semiconductors into CMOS BEOL processes, and developing low-temperature p-type semiconductors to advance 3D IC technologies.