Phase Change Memory and 3D DRAM
Superlattice Phase Change Memory (PCM)
PCM based on traditional phase-change materials like Ge2Sb2Te5 (GST225) is known to suffer from high switching power and resistance drift. Here we are exploring PCM using periodic layers of materials (e.g., TiTe2/GST), enabling more energy-efficient and faster programming. We are also exploring its application in brain-inspired computing (e.g., spiking neural networks, hyperdimensional computing).
3D DRAM
As DRAM technology nodes approach sub-10 nm range, traditional 6F2 DRAM faces significant barriers to further scaling. Stacking DRAM cells (3D DRAM) vertically can enable increased bitcell density. Here we use process, device, and circuit simulation to explore topics including but not limited to process integration, control line configuration, coupling noise etc.
