Download the 2018 Memory Trends zip file.
The Stanford Memory Trends is a compilation of tables and figures summarizing the various memory metrics reported for RRAM, PCM, CBRAM and STTMRAM. The tables include commonly sought parameters (including write current, cell size, switching time, endurance, retention etc.) presented in conferences and journals including IEDM, VLSI and ISSCC from 2001 and onward. The figures capture the high level trends of how certain parameters correlate to each other (such as cell area vs write energy).
This is a living document. Please check back for updates periodically.
note on usage
If you use the data in a publication or a presentation, please cite this work:
H.-S. P. Wong, C. Ahn, J. Cao, H.-Y. Chen, S. B. Eryilmaz, S. W. Fong, J. A. Incorvia, Z. Jiang, H. Li, C. Neumann, K. Okabe, S. Qin, J. Sohn, Y. Wu, S. Yu, X. Zheng, “Stanford Memory Trends,” https://nano.stanford.edu/stanford-memory-trends, accessed .
older versions2015 powerpoint slides with a summary of key data.
contacts for inquiries
PCM - Chris Neumann - neumann9 [at] stanford [dot] edu
CBRAM - Sophia Shengjun Qin - sjqin [at] stanford [dot] edu
STTMRAM - Chris Neumann - neumann9 [at] stanford [dot] edu
RRAM - Xin Zheng - xzheng3 [at] stanford [dot] edu
Last modified Mon, 17 Dec, 2018 at 10:49